Covering an area of approximately 1,000 square meters, the laboratory currently possesses over 200 sets of parametric characterization instruments and reliability testing equipment. It has established dedicated platforms for power devices, power modules (including automotive-grade IGBT and SiC MOS modules), wafer testing, and power device reliability testing, boasting domestic-leading capabilities in the testing and evaluation of wide-bandgap power devices. It is also one of the few laboratories in China equipped with dynamic reliability assessment capabilities. The laboratory primarily undertakes testing tasks such as electrical performance parameter characterization for crmicro's power semiconductor R&D, as well as reliability testing for third-generation semiconductors. In November 2023, the laboratory was designated as the Wuxi Key Laboratory of Power Semiconductors by the Wuxi Science and Technology Bureau. Subsequently, in March 2025, it passed the CNAS onsite assessment and officially obtained the CNAS Laboratory Accreditation Certificate, Passed the CNAS expansion assessment in 2026.

Covering an area of over 4,000 square meters and equipped with more than 300 sets of advanced testing equipment, this laboratory offers full-chain testing services for products such as power devices and modules, comprehensively covering product design, wafer manufacturing, circuit probing, packaging, final testing, burn-in screening, reliability qualification, and failure analysis. The laboratory was recognized as the Chongqing Key Laboratory of Industry and Information Technology in 2021. It achieved its initial CNAS accreditation in 2024, followed by passing the CNAS scope extension assessment in 2025, qualifying it with full capabilities for AEC-Q101 automotive-grade reliability qualification. The laboratory has reached a domestic nation-class standard in multiple key core technologies: its failure and microstructure analysis possesses unit-cell level characterization capabilities; its material composition and elemental analysis reach a ppt-level (parts per trillion) detection limit; and its parametric characterization testing capabilities can reach up to 10kV.